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Proceedings Paper

Development of laser-produced plasma-based EUV light source technology for HVM EUV lithography
Author(s): Junichi Fujimoto; Tsukasa Hori; Tatsuya Yanagida; Takeshi Ohta; Yasufumi Kawasuji; Yutaka Shiraishi; Tamotsu Abe; Takeshi Kodama; Hiroaki Nakarai; Taku Yamazaki; Hakaru Mizoguchi
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Paper Abstract

Since 2002, we have been developing a CO2-Sn-LPP EUV light source, which is the most promising solution as the 13.5 nm high power (>200 W) light source for HVM EUVL for its high efficiency, power scalability, and spatial freedom around plasma. We believe that the CO2-Sn-LPP scheme is the most feasible candidate for the EUV light source for HVM. We have several engineering data from our test tools, which include: the maximum of 3.8 % CE, the maximum of 2.5 mJ pulse energy, 93 % Sn ionization rate, 98 % Sn debris mitigation by a magnetic field, and 68 % CO2 laser energy absorption rate. Based on these data we are developing our first light source for HVM: "GL200E." The latest data and the overview of EUV light source for the HVM EUVL are reviewed in this paper. Part of this work was supported by the New Energy and Industrial Technology Development Organization (NEDO).

Paper Details

Date Published: 22 March 2012
PDF: 13 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220F (22 March 2012); doi: 10.1117/12.916093
Show Author Affiliations
Junichi Fujimoto, Gigaphoton Inc. (Japan)
Tsukasa Hori, Komatsu Ltd. (Japan)
Tatsuya Yanagida, Komatsu Ltd. (Japan)
Takeshi Ohta, Komatsu Ltd. (Japan)
Yasufumi Kawasuji, Komatsu Ltd. (Japan)
Yutaka Shiraishi, Komatsu Ltd. (Japan)
Tamotsu Abe, Komatsu Ltd. (Japan)
Takeshi Kodama, Komatsu Ltd. (Japan)
Hiroaki Nakarai, Komatsu Ltd. (Japan)
Taku Yamazaki, Komatsu Ltd. (Japan)
Hakaru Mizoguchi, Gigaphoton Inc. (Japan)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood II, Editor(s)

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