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Proceedings Paper

Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire
Author(s): D. J. Rogers; A. Ougazzaden; V. E. Sandana; T. Moudakir; A. Ahaitouf; F. Hosseini Teherani; S. Gautier; L. Goubert; I. A. Davidson; K. A. Prior; R. P. McClintock; P. Bove; H.-J. Drouhin; M. Razeghi
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Paper Abstract

GaN was grown on ZnO-buffered c-sapphire (c-Al2O3) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al2O3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm2 of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.

Paper Details

Date Published: 2 March 2012
PDF: 9 pages
Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630R (2 March 2012); doi: 10.1117/12.916013
Show Author Affiliations
D. J. Rogers, Nanovation (France)
A. Ougazzaden, Georgia Institute of Technology/Georgia Tech-Lorraine, UMI 2958, CNRS, Georgia Tech (France)
V. E. Sandana, Nanovation (France)
Ecole Polytechnique (France)
Northwestern Univ. (United States)
T. Moudakir, Georgia Institute of Technology/Georgia Tech-Lorraine, CNRS (France)
A. Ahaitouf, UMI 2958,Georgia Tech-CNRS (France)
F. Hosseini Teherani, Nanovation (France)
S. Gautier, LMOPS-EA, Univ. de Lorraine et Supélec (France)
UMI 2958,Georgia Tech-CNRS (France)
L. Goubert, Nanovation (France)
Ecole Polytechnique (France)
Northwestern Univ. (United States)
I. A. Davidson, Heriot-Watt Univ., SUPA (United Kingdom)
K. A. Prior, Heriot-Watt Univ., SUPA (United Kingdom)
R. P. McClintock, MP Technologies LLC (United States)
P. Bove, Nanovation (France)
H.-J. Drouhin, Ecole Polytechnique (France)
M. Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 8263:
Oxide-based Materials and Devices III
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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