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Proceedings Paper

Complementary patterning demonstration with e-beam direct writer and spacer DP process of 11nm node
Author(s): Hideaki Komami; Kenji Abe; Keita Bunya; Hideaki Isobe; Masahiro Takizawa; Masaki Kurokawa; Akio Yamada; Hietami Yaegashi; Kenichi Oyama; Shohei Yamauchi
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Paper Abstract

We successfully demonstrate complementary patterning with self-aligned double patterning (SADP) and currently used e-beam direct writer (EBDW). The complementary patterning is achieved with not only positive type pattern for gate layer but also negative type one for 1st metal (M1) layer at 11nm node. The e-beam exposure is performed by Advantest. SADP process before e-beam exposure and etching after e-beam exposure are performed by Tokyo Electron. This paper also reports EBDW applicability to complementary patterning for 8nm node and beyond in the light of overlay and resolution, and improving plans including shot number reduction.

Paper Details

Date Published: 21 March 2012
PDF: 10 pages
Proc. SPIE 8323, Alternative Lithographic Technologies IV, 832313 (21 March 2012); doi: 10.1117/12.915821
Show Author Affiliations
Hideaki Komami, Advantest Corp. (Japan)
Kenji Abe, Advantest Corp. (Japan)
Keita Bunya, Advantest Corp. (Japan)
Hideaki Isobe, Advantest Corp. (Japan)
Masahiro Takizawa, Advantest Corp. (Japan)
Masaki Kurokawa, Advantest Corp. (Japan)
Akio Yamada, Advantest Corp. (Japan)
Hietami Yaegashi, Tokyo Electron Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Shohei Yamauchi, Tokyo Electron Ltd. (Japan)

Published in SPIE Proceedings Vol. 8323:
Alternative Lithographic Technologies IV
William M. Tong, Editor(s)

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