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Proceedings Paper

Can fast rule-based assist feature generation in random-logic contact layout provide sufficient process window?
Author(s): Ahmed Omran; George Lippincott; Jochen Schacht; Junjiang Lei; Le Hong; Loran Friedrich; Regina Shen; Ryan Chou
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Paper Abstract

A two-step full-chip simulation method for optimization of sub-resolution assist feature placement in a random logic Contact layer using ArF immersion Lithography is presented. Process window, characterized by depth of focus (DOF) , of square or rectangular target features is subject to optimization using the optical and resist effects described by calibrated models (Calibre ® nmOPC, nmSRAF simulation platform). By variation of the assist feature dimension and their distance to main feature in a test pattern, a set of comprehensive rules is derived which is applied to generate raw assist features in a random logic layout. Concurrently with the generation of the OPC shapes for the main features, the raw assist feature become modified to maximize process window and to ensure non-printability of the assist features. In this paper, the selection of a test pattern, the generation of a set of "golden" rules of the raw assist feature generation and their implementation as well as the assist feature coverage in a random logic layout is presented and discussed with respect to performance.

Paper Details

Date Published: 13 March 2012
PDF: 11 pages
Proc. SPIE 8326, Optical Microlithography XXV, 83261P (13 March 2012); doi: 10.1117/12.915787
Show Author Affiliations
Ahmed Omran, Mentor Graphics Corp. (Egypt)
George Lippincott, Mentor Graphics Corp. (United States)
Jochen Schacht, Mentor Graphics Corp. (Taiwan)
Junjiang Lei, Mentor Graphics Corp. (United States)
Le Hong, Mentor Graphics Corp. (United States)
Loran Friedrich, Mentor Graphics Corp. (United States)
Regina Shen, Mentor Graphics Corp. (Taiwan)
Ryan Chou, Mentor Graphics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)

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