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Proceedings Paper

How much further can lithography process windows be improved?
Author(s): Mary Ann Hockey; Qin Lin; Eric Calderas
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Paper Abstract

Utilizing thin photoresist layers for successful pattern transfer has gained acceptance as the lithography process of record, primarily due to the incorporation of silicon-containing hardmask (HM) layers for added etching resistance. Our work includes understanding the impact of HfO2 and ZrO2 nanocrystal additives incorporated into spin-on HM materials. The goal is to quantify both etch selectivity and the improvements in the lithography process windows with the addition of HfO2 nanocrystals into various types of polymers. Conventional 193-nm photoresists and spin-on carbon materials were selected as references for etch selectivity calculations. Results indicate there are process window advantages with improvements in the depth of focus (DOF) and overall pattern collapse margins. In addition, the ability to quantify line width roughness (LWR) as a function of resolution has been accomplished for these HM materials, and results show low levels of LWR are achievable. Overall lithography process margins are positive for DOF, exposure latitude (EL), LWR, and pattern collapse with the incorporation of HfO2-enhanced HM coatings for etch protection.

Paper Details

Date Published: 16 March 2012
PDF: 10 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280Q (16 March 2012); doi: 10.1117/12.915672
Show Author Affiliations
Mary Ann Hockey, Brewer Science, Inc. (United States)
Qin Lin, Brewer Science, Inc. (United States)
Eric Calderas, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

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