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Proceedings Paper

Contact hole shrink process using directed self-assembly
Author(s): Yuriko Seino; Hiroki Yonemitsu; Hironobu Sato; Masahiro Kanno; Hikazu Kato; Katsutoshi Kobayashi; Ayako Kawanishi; Tsukasa Azuma; Makoto Muramatsu; Seiji Nagahara; Takahiro Kitano; Takayuki Toshima
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Paper Abstract

We report on a contact hole shrink process using directed self-assembly. A diblock copolymer, poly (styrene-blockmethyl methacrylate) (PS-b-PMMA), is used to shrink contact holes. Contact hole guide patterns for graphoepitaxy are formed by ArF photoresists. Cylindrical domains of PMMA is removed using organic solvents after DUV (λ <200 nm) irradiation. In this work, it is found that a solvent system is the best developer from the evaluated single solvent systems and mixed solvent systems. The wet development of PS-b-PMMA strongly depends on total exposure dose of DUV irradiation. With lower exposure dose, the cylindrical domains of PMMA are not clearly removed. With optimum exposure dose, PMMA is developed clearly. The contact hole guide patterns of 75 nm in diameter are successfully shrunk to 20 nm in diameter using the wet development process.

Paper Details

Date Published: 21 March 2012
PDF: 7 pages
Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230Y (21 March 2012); doi: 10.1117/12.915652
Show Author Affiliations
Yuriko Seino, Toshiba Corp. (Japan)
Hiroki Yonemitsu, Toshiba Corp. (Japan)
Hironobu Sato, Toshiba Corp. (Japan)
Masahiro Kanno, Toshiba Corp. (Japan)
Hikazu Kato, Toshiba Corp. (Japan)
Katsutoshi Kobayashi, Toshiba Corp. (Japan)
Ayako Kawanishi, Toshiba Corp. (Japan)
Tsukasa Azuma, Toshiba Corp. (Japan)
Makoto Muramatsu, Tokyo Electron Kyushu Ltd. (Japan)
Seiji Nagahara, Tokyo Electron Ltd. (Japan)
Takahiro Kitano, Tokyo Electron Kyushu Ltd. (Japan)
Takayuki Toshima, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 8323:
Alternative Lithographic Technologies IV
William M. Tong, Editor(s)

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