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Proceedings Paper

Remarkable evolution of electrical conductivity in Al:ZnO films
Author(s): H. Dondapati; R. Mundle; R. B. Konda; M. Bahoura; A. K. Pradhan
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Paper Abstract

We report here the investigation of Al-doped ZnO films fabricated by the RF magnetron deposition technique. The films show excellent crystalline quality with atomically smooth surface morphology. The Al-doped ZnO films have been characterized in detail using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy UV-visible spectrophotometer and four probe technique. It was found that the morphological, structural, electrical and optical properties of Al-doped ZnO films are greatly dependent on substrate temperature. XRD patterns show that all the films are well crystallized with hexagonal wurtzite structure with preferred orientation along (0 0 2) plane. The electrical resistivity of Al-doped ZnO films decreases with increasing substrate temperature and was found to be close to 1.5 × 10-3 ohm-cm and transmittance >85% in the visible region.

Paper Details

Date Published: 30 March 2012
PDF: 6 pages
Proc. SPIE 8344, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2012, 83441M (30 March 2012); doi: 10.1117/12.914639
Show Author Affiliations
H. Dondapati, Norfolk State Univ. (United States)
R. Mundle, Norfolk State Univ. (United States)
R. B. Konda, Norfolk State Univ. (United States)
M. Bahoura, Norfolk State Univ. (United States)
A. K. Pradhan, Norfolk State Univ. (United States)

Published in SPIE Proceedings Vol. 8344:
Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2012
Vijay K. Varadan, Editor(s)

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