
Proceedings Paper
Growth and characterization of large-diameter, lithium-free ZnO single crystalsFormat | Member Price | Non-Member Price |
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Paper Abstract
Large-diameter, lithium-free ZnO single-crystal substrates of high crystalline quality will enable development and
commercialization of high-performance ZnO-based semiconductor devices, such as UV and visible light emitting diodes
(LEDs), UV laser diodes and solar-blind UV detectors for variety of applications. We have recently developed a novel
crystal growth technique for producing lithium-free ZnO single crystal boules of 1 inch in diameter. We also fabricated
ZnO single crystal wafers in sizes up to 1 inch in diameter. Chemical purity, crystalline defects, and electrical resistivity
of ZnO single crystals were analyzed. Results from crystal growth and material characterization are presented and
discussed. Our research results suggest that the novel crystal growth technique is a viable production technique for
producing ZnO single crystals and substrates for semiconductor device applications.
Paper Details
Date Published: 29 February 2012
PDF: 8 pages
Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630E (29 February 2012); doi: 10.1117/12.914059
Published in SPIE Proceedings Vol. 8263:
Oxide-based Materials and Devices III
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)
PDF: 8 pages
Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630E (29 February 2012); doi: 10.1117/12.914059
Show Author Affiliations
Shaoping Wang, Fairfield Crystal Technology, LLC (United States)
Aneta Kopec, Fairfield Crystal Technology, LLC (United States)
Aneta Kopec, Fairfield Crystal Technology, LLC (United States)
Andrew G. Timmerman, Fairfield Crystal Technology, LLC (United States)
Published in SPIE Proceedings Vol. 8263:
Oxide-based Materials and Devices III
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)
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