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Proceedings Paper

Suppression of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors
Author(s): G. Chen; B.-M. Nguyen; A. M. Hoang; E. K. Huang; S. R. Darvish; M. Razeghi
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Paper Abstract

One of the biggest challenges of improving the electrical performance in Type II InAs/GaSb superlattice photodetector is suppressing the surface leakage. Surface leakage screens important bulk dark current mechanisms, and brings difficulty and uncertainty to the material optimization and bulk intrinsic parameters extraction such as carrier lifetime and mobility. Most of surface treatments were attempted beyond the mid-infrared (MWIR) regime because compared to the bulk performance, surface leakage in MWIR was generally considered to be a minor factor. In this work, we show that below 150K, surface leakage still strongly affects the electrical performance of the very high bulk performance p-π-M-n MWIR photon detectors. With gating technique, we can effectively eliminate the surface leakage in a controllable manner. At 110K, the dark current density of a 4.7 μm cut-off gated photon diode is more than 2 orders of magnitude lower than the current density in SiO2 passivated ungated diode. With a quantum efficiency of 48%, the specific detecivity of gated diodes attains 2.5 x 1014 cmHz1/2/W, which is 3.6 times higher than that of ungated diodes.

Paper Details

Date Published: 20 January 2012
PDF: 8 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826811 (20 January 2012); doi: 10.1117/12.913741
Show Author Affiliations
G. Chen, Northwestern Univ. (United States)
B.-M. Nguyen, Northwestern Univ. (United States)
A. M. Hoang, Northwestern Univ. (United States)
E. K. Huang, Northwestern Univ. (United States)
S. R. Darvish, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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