
Proceedings Paper
Novel fabrication method for ZnO films via nitrogen-mediated crystallizationFormat | Member Price | Non-Member Price |
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Paper Abstract
High quality ZnO films have been obtained by utilizing buffer layers fabricated via nitrogen mediated crystallization
(NMC), where sputtering method is employed for preparation of both buffer layers and ZnO films. The crystal grain size
of ZnO:Al (AZO) films with NMC-buffer layers is about 3 times larger than that of conventional films, which is
considered to be due to the low nuclei density of NMC-buffer layers. As a result, the resistivity of AZO films drastically
reduces from 4.76 m Ωcm for the conventional films to 0.48 m Ωcm for our films when the total film thickness is 20
nm. The NMC buffer layers also improve the spatial distribution of the resistivity, which indicates that the crystallinity at
the initial stage of deposition govern the properties of AZO films. Furthermore, we have succeeded in epitaxial growth of
ZnO films, whose FWHM of the rocking curve of (002) peak is as narrow as 0.061°, on c-plane sapphire substrates by
using the NMC method. From these results, we conclude that our method described here is full of promise for fabrication
of ZnO-based materials.
Paper Details
Date Published: 29 February 2012
PDF: 6 pages
Proc. SPIE 8263, Oxide-based Materials and Devices III, 826306 (29 February 2012); doi: 10.1117/12.911971
Published in SPIE Proceedings Vol. 8263:
Oxide-based Materials and Devices III
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)
PDF: 6 pages
Proc. SPIE 8263, Oxide-based Materials and Devices III, 826306 (29 February 2012); doi: 10.1117/12.911971
Show Author Affiliations
N. Itagaki, Kyushu Univ. (Japan)
PRESTO, Japan Science and Technology Agency (Japan)
K. Kuwahara, Kyushu Univ. (Japan)
PRESTO, Japan Science and Technology Agency (Japan)
K. Kuwahara, Kyushu Univ. (Japan)
K. Matsushima, Kyushu Univ. (Japan)
K. Oshikawa, Kyushu Univ. (Japan)
K. Oshikawa, Kyushu Univ. (Japan)
Published in SPIE Proceedings Vol. 8263:
Oxide-based Materials and Devices III
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)
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