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Proceedings Paper

The role of Sb compositions on the properties of InAs/GaAsSb quantum dots (QDs)
Author(s): Keun-Yong Ban; Stephen P. Bremner; Darius Kuciauskas; Som N. Dahal; Christiana B. Honsberg
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Paper Abstract

QD size, uniformity and density in InAs/GaAsSb material system for increasing Sb content are studied using Atomic Force Microscopy (AFM). AFM results show that QD density and uniformity improve with Sb content increase. The improvement of QD uniformity is ensured by the narrowing of the analysis of AFM scans. To obtain minimum VBO, InAs/GaAsSb with various Sb compositions is investigated by PL and TRPL measurements. PL data shows a blue-shift as excitation power increases as evidence of a type II band structure. Since the PL peak of 8 and 13 % Sb samples did not shift while that of 15 % Sb sample is blue-shifted with increasing the excitation power it is concluded that InAs QDs/GaAs0.86Sb0.14 would have minimum valence band offset. This tendency is supported by the change of a carrier lifetime estimated from TRPL data

Paper Details

Date Published: 21 February 2012
PDF: 6 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561C (21 February 2012); doi: 10.1117/12.910834
Show Author Affiliations
Keun-Yong Ban, Arizona State Univ. (United States)
Stephen P. Bremner, The Univ. of New South Wales (Australia)
Darius Kuciauskas, National Renewable Energy Lab. (United States)
Som N. Dahal, Arizona State Univ. (United States)
Christiana B. Honsberg, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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