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Proceedings Paper

Analysis of radiation hardness and subcell I-V characteristics of GaInP/GaAs/Ge solar cells using electroluminescence measurements
Author(s): R. Hoheisel; S. Messenger; D. Scheiman; P. P. Jenkins; R. J. Walters
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Paper Abstract

The voltage degradation of GaInP/GaAs/Ge triple-junction solar cells after exposure to proton irradiation is analyzed using electroluminescence (EL) measurements. It is shown that EL measurements in combination with the reciprocity relationship allow accurate determination of the degradation of the open-circuit voltage (Voc) of each individual subcell. The impact of different proton energies on the voltage degradation of each subcell is analyzed. For solar cells exposed to extremely high radiation levels, a correlation between the degradation of the quantum efficiency of the Ge subcell and its EL properties is presented.

Paper Details

Date Published: 21 February 2012
PDF: 7 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561X (21 February 2012); doi: 10.1117/12.910031
Show Author Affiliations
R. Hoheisel, George Washington Univ. (United States)
Naval Research Lab. (United States)
S. Messenger, Naval Research Lab. (United States)
D. Scheiman, Naval Research Lab. (United States)
P. P. Jenkins, Naval Research Lab. (United States)
R. J. Walters, Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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