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Proceedings Paper

Hydrothermal growth and characterization of bulk Ga-doped and Ga/N-codoped ZnO crystals
Author(s): Buguo Wang; Matthew Mann; Michael Snure; Michael J. Callahan; David C. Look
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Paper Abstract

Bulk ZnO crystals were grown by the hydrothermal technique with Ga2O3 or GaN added to the solution in an attempt to dope with Ga, or co-dope with Ga and N, respectively. Adding Ga2O3 alone to the growth solution significantly reduces the ZnO growth rate; however, the resulting crystal is highly conductive, with a resistivity approaching 0.01 Ω cm. In contrast, the addition of GaN had less effect on the growth of ZnO, but the crystal was of poor quality with a higher resistivity, about 0.1 Ω cm. Photoluminescence spectra at 4 K show Ga0-bound-exciton peak energies of 3.3604 and 3.3609 eV for the Ga- and Ga/N-doped crystals, respectively; these energies differ slightly from the literature value of 3.3598 eV, evidently due to compressive strain. Other peaks at 3.307, 3.290, 3.236, and 3.20 eV were found in the Ga/N-codoped ZnO after the crystal was annealed at 600°C in air. The 3.307 eV peak is the so-called A line, and likely arises from recombination of a free electron with a neutral N-related acceptor.

Paper Details

Date Published: 29 February 2012
PDF: 6 pages
Proc. SPIE 8263, Oxide-based Materials and Devices III, 826305 (29 February 2012);
Show Author Affiliations
Buguo Wang, Solid State Scientific Corp. (United States)
Matthew Mann, Air Force Research Lab. (United States)
Michael Snure, Air Force Research Lab. (United States)
Michael J. Callahan, Solid State Scientific Corp. (United States)
David C. Look, Wright State Univ. (United States)
Wyle Laboratories, Inc. (United States)

Published in SPIE Proceedings Vol. 8263:
Oxide-based Materials and Devices III
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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