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Proceedings Paper

Comparison of linewidth enhancement factor for compressively strained AlGaInAs and InGaAsP quantum well lasers
Author(s): Durga Prasad Sapkota; Madhu Sudan Kayastha; Koichi Wakita
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Paper Abstract

We have compared and analyzed the theoretical possibility for the extreme reduction in the linewidth enhancement (α- factor) in strained layer quantum-well (QW) lasers for AlGaInAs and InGaAsP material. Valence band structure and optical gain in both types of QWs under compressive strain have been calculated using 4×4 Luttinger-Kohn Hamiltonian. The Luttinger parameters of these quaternary materials were determined from the linear interpolation between the values of their respective binaries. The α-factor has been calculated as the ratio of the carrier induced change in real component of the complex refractive index to that in imaginary component of the refractive index. We have used Kramers-Kronig relations to calculate the refractive index change due to carrier induced. The α-factor was up to 1.5 times smaller in AlGaInAs QW than in InGaAsP QW lasers. The material modal differential gain is found to be approximately 1.38 times larger and material carrier induced refractive index change is 1.16 times smaller in the former material than the latter, respectively.

Paper Details

Date Published: 28 February 2012
PDF: 7 pages
Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 825513 (28 February 2012); doi: 10.1117/12.909851
Show Author Affiliations
Durga Prasad Sapkota, Chubu Univ. (Japan)
Madhu Sudan Kayastha, Chubu Univ. (Japan)
Koichi Wakita, Chubu Univ. (Japan)

Published in SPIE Proceedings Vol. 8255:
Physics and Simulation of Optoelectronic Devices XX
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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