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Proceedings Paper

Hardened planar nitride based cold cathode electron emitter
Author(s): R. Pillai; D. Starikov; C. Boney; A. Bensaoula
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Paper Abstract

Low threshold electron emission from planar AlN/Silicon heterostructures is reported. The surface emitting ballistic electron structure consisted of an undoped AlN layer grown on Silicon by Molecular Beam Epitaxy, a Ti/Au Ohmic contact, and a thin Pt Schottky contact fabricated by e-beam deposition. Tunnel-transparent Pt Schottky contact was deposited on a 1 μm thick Silicon Dioxide (SiO2) layer and covered a 4 x 4 matrix of 50 μm diameter via produced in the SiO2 layer using photolithography The measurements were performed in vacuum (~10-8 Torr) using a metal grid separated from the structure by a 60 micron thick Kapton® polyimide film having an opening aligned with the via. Bias voltages in the range of 0-130 V were applied across the Schottky diode, while currents were recorded across the structure for grid voltages ranging from 0 to 50 V. The field emission nature of the measured currents was confirmed by plotting the Fowler-Nordheim dependence. Current density of at least 2.5x10-4A/cm2 was achieved for a grid voltage of 50 V and a bias of 130 V. Degradation of the structure performance was observed at bias voltages exceeding 90 V as a result of Schottky barrier modification under the elevated temperature and high electric field operation. The solid-state electron emitting structure indicated a threshold field as low as 0.2 V/μm under applied grid voltage of 12 V.

Paper Details

Date Published: 27 February 2012
PDF: 6 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620O (27 February 2012); doi: 10.1117/12.909587
Show Author Affiliations
R. Pillai, Univ. of Houston (United States)
D. Starikov, Univ. of Houston (United States)
Integrated Micro Sensors, Inc. (United States)
C. Boney, Univ. of Houston (United States)
Integrated Micro Sensors, Inc. (United States)
A. Bensaoula, Univ. of Houston (United States)

Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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