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Proceedings Paper

Top-down fabrication of GaN-based nanorod LEDs and lasers
Author(s): George T. Wang; Qiming Li; Jonathan Wierer; Jeffrey Figiel; Jeremy B. Wright; Ting S. Luk; Igal Brener
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Paper Abstract

Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ~250kW/cm2.

Paper Details

Date Published: 6 February 2012
PDF: 6 pages
Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 827816 (6 February 2012); doi: 10.1117/12.909377
Show Author Affiliations
George T. Wang, Sandia National Labs. (United States)
Qiming Li, Sandia National Labs. (United States)
Jonathan Wierer, Sandia National Labs. (United States)
Jeffrey Figiel, Sandia National Labs. (United States)
Jeremy B. Wright, Sandia National Labs. (United States)
Ting S. Luk, Sandia National Labs. (United States)
Igal Brener, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 8278:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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