Proceedings Paper
Electronic and thermal tuning of violet GaN coupled cavity laser| Format | Member Price | Non-Member Price |
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Paper Abstract
We demonstrate completely integrated tunable coupled cavity InGaN/GaN lasers with emission wavelength centered on
409 nm. Threshold currents are 650 mA per cavity for 8.7 um wide laser ridges. Experimental tuning map is explained
with estimation of refractive index change due to free carrier injection and the Vernier effect. Multimode laser emission
with the average full width half maximum of 0.3 nm, electronic tuning range of 1.6 nm and thermal tuning range of
2.4nm is observed.
Paper Details
Date Published: 27 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620W (27 February 2012); doi: 10.1117/12.909176
Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620W (27 February 2012); doi: 10.1117/12.909176
Show Author Affiliations
O. Guziy, Technische Univ. Delft (Netherlands)
S. Grzanka, Institute of High Pressure Physics (Poland)
TopGaN Ltd (Poland)
M. Leszczyński, Institute of High Pressure Physics (Poland)
TopGaN Ltd (Poland)
S. Grzanka, Institute of High Pressure Physics (Poland)
TopGaN Ltd (Poland)
M. Leszczyński, Institute of High Pressure Physics (Poland)
TopGaN Ltd (Poland)
P. Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd (Poland)
H. W. M. Salemink, Technische Univ. Delft (Netherlands)
TopGaN Ltd (Poland)
H. W. M. Salemink, Technische Univ. Delft (Netherlands)
Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)
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