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Proceedings Paper

Growth and characterization of Ga2O3 on sapphire substrates for UV sensor applications
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Paper Abstract

The β-Ga2O3 films were grown on (0001) sapphire at 500 °C by metal organic chemical vapor deposition. In the analysis of crystal structure, we found that the (-201) oriented single crystal β-Ga2O3 epilayer can be obtained under low chamber pressure of 15 torr. Moreover, a metal-semiconductor-metal solar-blind deep ultraviolet photodetector was fabricated with the β-Ga2O3 epilayer. As the bias voltage is 5 V, the photodetector exhibits a relatively low dark current about 0.2 pA, which induced by the highly resistive nature of the β-Ga2O3 thin films. From the responsivity result, it can be observed that photodetector shows a maximum responsivity at 260 nm, revealing the β-Ga2O3 photodetector was really solar-blind. The responsivity of the photodetector was as high as 20.1 A/W with an applied bias of 5 V and an incident light wavelength of 260 nm. The improved performance is attributed to the high quality of β-Ga2O3 epilayer.

Paper Details

Date Published: 29 February 2012
PDF: 7 pages
Proc. SPIE 8263, Oxide-based Materials and Devices III, 826317 (29 February 2012); doi: 10.1117/12.908768
Show Author Affiliations
Dong-Sing Wuu, National Chung Hsing Univ. (Taiwan)
Da-Yeh Univ. (Taiwan)
Sin-Liang Ou, National Chung Hsing Univ. (Taiwan)
Ray-Hua Horng, National Chung Hsing Univ. (Taiwan)
Parvaneh Ravadgar, National Cheng Kung Univ. (Taiwan)
Tzu-Yu Wang, National Chung Hsing Univ. (Taiwan)
Hsin-Ying Lee, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 8263:
Oxide-based Materials and Devices III
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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