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Proceedings Paper

Monitoring of the formation of a photosensitive device by electric breakdown of an impurity containing oxide in a MOS capacitor
Author(s): Raffaele Di Giacomo; Giovanni Landi; Christian Boit; Heinz C. Neitzert
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Paper Abstract

The formation of an photosensitive device due to the local breakdown in an MOS structure with an impurity containing oxide layer has been monitored. A stepwise breakdown of the oxide layer resulted in the formation of a diode like characteristics with further on stable current-voltage characteristics. Under illumination with white and blue light we found a high photosensitivity of the resulting structure, probably due to the formation of a local p-n junction due to out-diffusion from the oxide of n-type dopants into the underlying silicon substrate. Using a blue light LED illumination during the monitoring of the device formation enables the identification of the moment, when a high ratio between photo- and dark current is obtained.

Paper Details

Date Published: 14 February 2012
PDF: 7 pages
Proc. SPIE 8249, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V, 824919 (14 February 2012); doi: 10.1117/12.908760
Show Author Affiliations
Raffaele Di Giacomo, Univ. degli Studi di Salerno (Italy)
Giovanni Landi, Fern Univ. GHS Hagen (Germany)
Christian Boit, Technische Univ. Berlin (Germany)
Heinz C. Neitzert, Univ. degli Studi di Salerno (Italy)

Published in SPIE Proceedings Vol. 8249:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V
Winston V. Schoenfeld; Raymond C. Rumpf; Georg von Freymann, Editor(s)

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