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Proceedings Paper

Planar technologies for SPAD arrays with improved performances
Author(s): Angelo Gulinatti; Francesco Panzeri; Ivan Rech; Piera Maccagnani; Massimo Ghioni; Sergio Cova
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Paper Abstract

In the last years many progresses have been made in the field of Silicon Single Photon Avalanche Diodes (SPAD) thanks to the improvements both in device design and in fabrication technology. For example, the use of custom fabrication processes has allowed a steadily improvement of SPAD performance in terms of active area diameter, Dark Count Rate (DCR), and Photon Detection Efficiency (PDE). Although a significant breakthrough has been achieved with the recent introduction of a new device structure capable of combining a good timing resolution with a remarkable PDE in the near infrared region, nevertheless there is still room for further improvements. In this paper we will discuss further modifications to the device structure enabling the fabrication of arrays with red enhanced photon detection efficiency.

Paper Details

Date Published: 20 January 2012
PDF: 7 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82681D (20 January 2012); doi: 10.1117/12.908648
Show Author Affiliations
Angelo Gulinatti, Politecnico di Milano (Italy)
Francesco Panzeri, Politecnico di Milano (Italy)
Ivan Rech, Politecnico di Milano (Italy)
Piera Maccagnani, Istituto per la Microelettronica e Microsistemi (Italy)
Massimo Ghioni, Politecnico di Milano (Italy)
Micro Photon Devices s.r.l. (Italy)
Sergio Cova, Politecnico di Milano (Italy)
Micro Photon Devices s.r.l. (Italy)

Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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