Proceedings Paper
Materials development for photo-inhibited super-resolution (PINSR) lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
Progress in materials for radical initiated, radical inhibited super-resolution lithography is reported. The photochemistry
and optical system is described, with a brief discussion on the theory of operation. A motivation
is presented for developing a new material that may be used as a spinnable photoresist, and qualitative resist
requirements are discussed. Results from FTIR experiments suggest how viscosity and monomer type may affect
resist performance. Finally, focused beam photoinhibition experiments on a novel photoresist are presented.
Paper Details
Date Published: 8 February 2012
PDF: 9 pages
Proc. SPIE 8249, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V, 824904 (8 February 2012); doi: 10.1117/12.908512
Published in SPIE Proceedings Vol. 8249:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V
Winston V. Schoenfeld; Raymond C. Rumpf; Georg von Freymann, Editor(s)
PDF: 9 pages
Proc. SPIE 8249, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V, 824904 (8 February 2012); doi: 10.1117/12.908512
Show Author Affiliations
Darren L. Forman, Univ. of Colorado at Boulder (United States)
Gerrit L. Heuvelman, Heidelberg Instruments Mikrotechnik GmbH (Germany)
Gerrit L. Heuvelman, Heidelberg Instruments Mikrotechnik GmbH (Germany)
Robert R. McLeod, Univ. of Colorado at Boulder (United States)
Published in SPIE Proceedings Vol. 8249:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V
Winston V. Schoenfeld; Raymond C. Rumpf; Georg von Freymann, Editor(s)
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