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Proceedings Paper

Materials development for photo-inhibited super-resolution (PINSR) lithography
Author(s): Darren L. Forman; Gerrit L. Heuvelman; Robert R. McLeod
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Paper Abstract

Progress in materials for radical initiated, radical inhibited super-resolution lithography is reported. The photochemistry and optical system is described, with a brief discussion on the theory of operation. A motivation is presented for developing a new material that may be used as a spinnable photoresist, and qualitative resist requirements are discussed. Results from FTIR experiments suggest how viscosity and monomer type may affect resist performance. Finally, focused beam photoinhibition experiments on a novel photoresist are presented.

Paper Details

Date Published: 8 February 2012
PDF: 9 pages
Proc. SPIE 8249, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V, 824904 (8 February 2012); doi: 10.1117/12.908512
Show Author Affiliations
Darren L. Forman, Univ. of Colorado at Boulder (United States)
Gerrit L. Heuvelman, Heidelberg Instruments Mikrotechnik GmbH (Germany)
Robert R. McLeod, Univ. of Colorado at Boulder (United States)

Published in SPIE Proceedings Vol. 8249:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V
Winston V. Schoenfeld; Raymond C. Rumpf; Georg von Freymann, Editor(s)

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