Proceedings Paper
Integration of 3D plasmonic devices with silicon-on-insulator-based optical circuitry| Format | Member Price | Non-Member Price |
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Paper Abstract
We demonstrate integrated plasmonic devices on silicon-on-insulator (SOI) substrate for photon-plasmon conversion
and plasmonic mode transformation at near-infrared frequency. The plasmonic junction converts photons to surface
plasmons and then back to photons with 7.35 dB conversion loss, and has successfully focused multimode plasmonic
propagation to deep subwavelength (80 nm by 50 nm) single mode propagation with 2.28 dB/μm propagation loss. The
integration approach leads to a robust and versatile platform for 3D nanoplasmonic gauges potentially functional in
ultra-fast communications and optical sensing.
Paper Details
Date Published: 2 February 2012
PDF: 6 pages
Proc. SPIE 8265, Optoelectronic Integrated Circuits XIV, 82650N (2 February 2012); doi: 10.1117/12.908502
Published in SPIE Proceedings Vol. 8265:
Optoelectronic Integrated Circuits XIV
Louay A. Eldada; El-Hang Lee, Editor(s)
PDF: 6 pages
Proc. SPIE 8265, Optoelectronic Integrated Circuits XIV, 82650N (2 February 2012); doi: 10.1117/12.908502
Show Author Affiliations
Ruoxi Yang, Rochester Institute of Technology (United States)
Zhaolin Lu, Rochester Institute of Technology (United States)
Published in SPIE Proceedings Vol. 8265:
Optoelectronic Integrated Circuits XIV
Louay A. Eldada; El-Hang Lee, Editor(s)
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