Share Email Print

Proceedings Paper

Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects
Author(s): Cemil Kayis; R. A. Ferreyra; Congyong Zhu; Mo Wu; X. Li; Ü. Özgür; A. Matulionis; H. Morkoç
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Low-frequency noise and current-transient measurements were applied to analyze the degradation of nearly latticematched InAlN/AlN/GaN heterostructure field-effect transistors caused by electrical stress. Almost identical devices on the same wafer were stresses 7 hr. at a fixed DC drain bias of VDS=20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz- 100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4x1012 cm-2. This result is in good agreement with the reported stress effect on drain-current degradation and current-gain-cutoff-frequency measurements, and consistent with the ultrafast decay of hot-phonons due to the phonon-plasmon coupling. Moreover, the current transient (gate-lag) measurements were also performed on pristine and highly degraded devices up to 5 ms pulse durations. Drain current is almost totally lost in degraded HFETs as opposed to a very small drop for pristine devices and no recovery observed for both indicating that generation of deep traps in GaN buffer.

Paper Details

Date Published: 27 February 2012
PDF: 7 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621W (27 February 2012); doi: 10.1117/12.908501
Show Author Affiliations
Cemil Kayis, Virginia Commonwealth Univ. (United States)
R. A. Ferreyra, Virginia Commonwealth Univ. (United States)
Congyong Zhu, Virginia Commonwealth Univ. (United States)
Mo Wu, Virginia Commonwealth Univ. (United States)
X. Li, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
A. Matulionis, Semiconductor Physics Institute of Center for Physical Science and Technology (Lithuania)
H. Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?