Proceedings Paper
Measurement of the polarimetric response of suspended gallium doped silicon nanowires| Format | Member Price | Non-Member Price |
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Paper Abstract
We describe an investigation of the polarimetric properties of suspended gallium doped silicon (Si:Ga) nanowires.
Wire fabrication has been done with a combined gallium implantation (using a focused ion beam) and subsequent
reactive ion and wet etches. A polarimetric microscope has been built and calibrated. Measurement of the
polarimetric response shows a high reflectivity and strong retardance on reflection, with some samples showing
low diattenuation, in contrast to conventional wire grid polarizers.
Paper Details
Date Published: 2 February 2012
PDF: 9 pages
Proc. SPIE 8227, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XIX, 82270P (2 February 2012); doi: 10.1117/12.908460
Published in SPIE Proceedings Vol. 8227:
Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XIX
Jose-Angel Conchello; Carol J. Cogswell; Tony Wilson; Thomas G. Brown, Editor(s)
PDF: 9 pages
Proc. SPIE 8227, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XIX, 82270P (2 February 2012); doi: 10.1117/12.908460
Show Author Affiliations
Michael J. Theisen, Institute of Optics, Univ. of Rochester (United States)
URnano, Univ. of Rochester (United States)
Brian L. McIntyre, URnano, Univ. of Rochester (United States)
URnano, Univ. of Rochester (United States)
Brian L. McIntyre, URnano, Univ. of Rochester (United States)
Thomas G. Brown, Institute of Optics, Univ. of Rochester (United States)
Published in SPIE Proceedings Vol. 8227:
Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XIX
Jose-Angel Conchello; Carol J. Cogswell; Tony Wilson; Thomas G. Brown, Editor(s)
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