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Proceedings Paper

III-V-N alloys grown by MOVPE in H2 and N2 mixed carrier gases
Author(s): S. Kuboya; Q. T. Thieu; S. Sanorpim; R. Katayama; K. Onabe
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Paper Abstract

The MOVPE growth properties of GaAsN and InAsN in H2 and N2 mixed carrier gases are studied. The N contents of the GaAsN and InAsN films increase with increasing the N2/(H2+N2) ratio in the H2 and N2 mixed carrier gas. The growth rate reduction of GaAsN films in higher N2/(H2+N2) ratio is explained by the smaller diffusion coefficients of precursors. The pyrolysis of 1,1-dimethylhydrazine (DMHy) is investigated by a quadrupole mass spectrometer (QMS) that is combined with the MOVPE growth reactor. At lower temperatures, the pyrolysis of DMHy in H2 carrier gas is higher than that in N2 carrier gas. The results indicate that the higher N contents at the higher N2/(H2+N2) ratios in the mixed carrier gases are attributed to the suppression of the decomposition of III-V-N films as NHx. The higher reactor pressure also exhibits higher N contents in each carrier gas. It is interpreted as the effect of the faster growth rates and the higher DMHy pyrolysis.

Paper Details

Date Published: 20 January 2012
PDF: 7 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680I (20 January 2012); doi: 10.1117/12.907981
Show Author Affiliations
S. Kuboya, The Univ. of Tokyo (Japan)
Q. T. Thieu, The Univ. of Tokyo (Japan)
S. Sanorpim, Chulalongkorn Univ. (Thailand)
R. Katayama, Tohoku Univ. (Japan)
K. Onabe, The Univ. of Tokyo (Japan)

Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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