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Proceedings Paper

High-power operation of a wide-striped InGaN laser diode array
Author(s): Katsuya Samonji; Shinji Yoshida; Hiroyuki Hagino; Kazuhiko Yamanaka; Shinichi Takigawa
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Paper Abstract

We successfully demonstrated a multi-striped InGaN-based laser diode (LD) array with an optical output power of 6.3 W under continuous wave operation. The LD array was operated on a conventional metal package without any cooling system. The world highest power operation as InGaN LD array is attributed to thermally optimized layout design taking advantage of highly efficient wide-striped emitters.

Paper Details

Date Published: 8 February 2012
PDF: 6 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771K (8 February 2012); doi: 10.1117/12.907936
Show Author Affiliations
Katsuya Samonji, Panasonic Corp. (Japan)
Shinji Yoshida, Panasonic Corp. (Japan)
Hiroyuki Hagino, Panasonic Corp. (Japan)
Kazuhiko Yamanaka, Panasonic Corp. (Japan)
Shinichi Takigawa, Panasonic Corp. (Japan)

Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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