We present photoluminescence and modal gain measurements in a Ga(NAsP) single-quantum well sample pseudomorphically grown on silicon substrate. The temperature dependence indicates that disorder induced localization effects dominate the low temperature photoluminescence spectra. Nevertheless, using the variable stripe length method, we observe modal gain values up to 15 cm^-1 at room temperature. These values are very promising, demonstrate the high optical quality of the new dilute nitride material Ga(NAsP) and underline its candidacy for electrically pumped lasers on silicon substrate.

Date Published: 2 February 2012
PDF: 6 pages
Proc. SPIE 8266, Silicon Photonics VII, 82660R (2 February 2012); doi: 10.1117/12.907677

Published in SPIE Proceedings Vol. 8266:
Silicon Photonics VII
Joel Kubby; Graham Trevor Reed, Editor(s)