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Proceedings Paper

Modeling gallium-arsenide-based and indium-phosphide-based distributed feedback quantum-well lasers
Author(s): Meng-Mu Shih
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Paper Abstract

This work shows the modeling process of computing coupling coefficients of first-order distributed feedback (DFB) metal-semiconductor quantum-well lasers. InGaAsP/InP/metal lasers with wavelength 1300 nm and GaAs/AlGaAs/metal lasers with wavelength 850 nm are discussed and compared. The optical waveguide structure for such a laser has semiconductor layers and a built-in metal grating layer. The interface between the metal layer and its neighboring semiconductor layer has sinusoidal corrugation geometry. To compute the coupling coefficient of the metalgrating waveguide, a model is constructed by Floquet-Bloch formalism (FB). Ray optics technique (RO) is also used to calculate the coupling coefficients. These two methods have close results.

Paper Details

Date Published: 8 February 2012
PDF: 6 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771Y (8 February 2012); doi: 10.1117/12.907622
Show Author Affiliations
Meng-Mu Shih, Univ. of Florida (United States)

Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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