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Proceedings Paper

Amorphous Si crystallization by 405-nm GaN laser diodes for high-performance TFT applications: advantages of using 405-nm wavelength
Author(s): Kiyoshi Morimoto; Nobuyasu Suzuki; Xinbing Liu; Katsuya Samonji; Kazuhiko Yamanaka; Masaaki Yuri
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Paper Abstract

A 405 nm LDs crystallization method of a-Si has been applied to the processing of bottom gate (BG) type microcystalline (μc-) Si TFT for the first time. We have successfully demonstrated superior I-V characteristics of BG μc- Si TFTs. In order to verify the validity of our process, we performed a heat flow simulation and compared commercially available lasers having wavelengths of 405, 445 and 532 nm. The simulation explained well the experimental results and showed that the wavelength is a crucial factor on uniformity, energy efficiency, and process margin and the 405 nm gave the best results among the three wavelengths.

Paper Details

Date Published: 17 February 2012
PDF: 10 pages
Proc. SPIE 8244, Laser-based Micro- and Nanopackaging and Assembly VI, 824407 (17 February 2012); doi: 10.1117/12.907145
Show Author Affiliations
Kiyoshi Morimoto, Panasonic Corp. (Japan)
Nobuyasu Suzuki, Panasonic Corp. (Japan)
Xinbing Liu, Panasonic Boston Lab. (United States)
Katsuya Samonji, Panasonic Corp. (Japan)
Kazuhiko Yamanaka, Panasonic Corp. (Japan)
Masaaki Yuri, Panasonic Corp. (Japan)

Published in SPIE Proceedings Vol. 8244:
Laser-based Micro- and Nanopackaging and Assembly VI
Friedrich G. Bachmann; Wilhelm Pfleging; Kunihiko Washio; Jun Amako; Willem Hoving; Yongfeng Lu, Editor(s)

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