Proceedings Paper
Photo-pumped GaAs1−xBix lasing operation with low-temperature-dependent oscillation wavelength| Format | Member Price | Non-Member Price |
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Paper Abstract
We report here the photo-pumped lasing operation of GaAs1-xBix with low-temperature-dependent oscillation
wavelengths, and show future prospects for the fabrication of Bi-based lasers. The GaAs0.975Bi0.025 active layer was
grown at 350 °C by molecular beam epitaxy. The lasing oscillation from a GaAs0.975Bi0.025/GaAs semiconductor chip
with a Fabry-Perot cavity was observed by photo-pumping. The characteristic temperature of the laser was 83 K in the
range between 160 and 240 K. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is
40% of the temperature coefficient of the band gap of GaAs in this temperature range. Above 240 K, the lasing threshold
pumping power increased sharply, and the lasing emission peak energy started shifting to higher energies. This result is
probably due to carrier behaviors at the GaAs0.975Bi0.025/GaAs heterointerface, in which a large valence band offset and
an almost flat conduction band offset are expected.
Paper Details
Date Published: 7 February 2012
PDF: 6 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827702 (7 February 2012); doi: 10.1117/12.907098
Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
PDF: 6 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827702 (7 February 2012); doi: 10.1117/12.907098
Show Author Affiliations
Yoriko Tominaga, Kyoto Institute of Technology (Japan)
Kunishige Oe, Kyoto Institute of Technology (Japan)
Kunishige Oe, Kyoto Institute of Technology (Japan)
Masahiro Yoshimoto, Kyoto Institute of Technology (Japan)
Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
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