
Proceedings Paper
Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodesFormat | Member Price | Non-Member Price |
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Paper Abstract
Highly n-doped GaN is a material of a reduced refractive index which may substitute AlGaN as a cladding layer in
InGaN laser diodes. In this study we focus on the determination of the optical absorption and the refractive index of
GaN:O having the electron concentration between 1·1018 - 8·1019 cm-3. Though the measured absorption coefficient for
the highest doped GaN are rather high (200 cm-1) we show, using an optical mode simulation, that you can design a
InGaN laser diode operating in blue/green region with decent properties and low optical losses. We propose to use
relatively thin AlGaN interlayer to separate plasmonic GaN from the waveguide and thus to dramatically reduce the
optical losses.
Paper Details
Date Published: 27 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826216 (27 February 2012); doi: 10.1117/12.906866
Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826216 (27 February 2012); doi: 10.1117/12.906866
Show Author Affiliations
Piotr Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Tomasz Czyszanowski, Technical Univ. of Lodz (Poland)
Lucja Marona, Institute of High Pressure Physics (Poland)
Szymon Grzanka, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Anna Kafar, Gdańsk Univ. of Technology (Poland)
Institute of High Pressure Physics (Poland)
Szymon Stanczyk, Gdańsk Univ. of Technology (Poland)
Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Tomasz Czyszanowski, Technical Univ. of Lodz (Poland)
Lucja Marona, Institute of High Pressure Physics (Poland)
Szymon Grzanka, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Anna Kafar, Gdańsk Univ. of Technology (Poland)
Institute of High Pressure Physics (Poland)
Szymon Stanczyk, Gdańsk Univ. of Technology (Poland)
Institute of High Pressure Physics (Poland)
Tadek Suski, Institute of High Pressure Physics (Poland)
Mike Leszczyński, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Michal Boćkowski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Grzegorz Muzioł, Institute of High Pressure Physics (Poland)
Maciej Kuc, Technical Univ. of Lodz (Poland)
Robert Sarzała, Technical Univ. of Lodz (Poland)
Mike Leszczyński, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Michal Boćkowski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Grzegorz Muzioł, Institute of High Pressure Physics (Poland)
Maciej Kuc, Technical Univ. of Lodz (Poland)
Robert Sarzała, Technical Univ. of Lodz (Poland)
Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)
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