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Proceedings Paper

Industrial high-power diode lasers: reliability, power, and brightness
Author(s): Stephan Strohmaier; Haiyan An; Thilo Vethake
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Paper Abstract

High power semiconductor lasers, single emitters and bars are developing fast. During the last decade key parameters of diode lasers, such as beam quality, power, spatial and spectral brightness, efficiency as well as reliability have been greatly improved. However, often only individual parameters have been optimized, accepting an adverse effect in the other key parameters. For demanding industrial applications in most cases it is not sufficient to achieve a record value in one of the parameters, on the contrary it is necessary to optimize all the mentioned parameters simultaneously. To be able to achieve this objective it is highly advantageous to have insight in the whole process chain, from epitaxial device structure design and growth, wafer processing, mounting, heat sink design, product development and finally the customer needs your final product has to fulfill. In this publication an overview of recent advances in industrial diode lasers at TRUMPF will be highlighted enabling advanced applications for both high end pump sources as well as highest brightness direct diode.

Paper Details

Date Published: 8 February 2012
PDF: 5 pages
Proc. SPIE 8241, High-Power Diode Laser Technology and Applications X, 82410Z (8 February 2012); doi: 10.1117/12.906832
Show Author Affiliations
Stephan Strohmaier, TRUMPF Photonics (United States)
Haiyan An, TRUMPF Photonics (United States)
Thilo Vethake, TRUMPF Photonics (United States)

Published in SPIE Proceedings Vol. 8241:
High-Power Diode Laser Technology and Applications X
Mark S. Zediker, Editor(s)

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