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Proceedings Paper

High pressure annealing of Europium implanted GaN
Author(s): K. Lorenz; S. M. C. Miranda; E. Alves; I. S. Roqan; K. P. O'Donnell; M. Boćkowski
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Paper Abstract

GaN epilayers were implanted with Eu to fluences of 1×1013 Eu/cm2 and 1×1015 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.

Paper Details

Date Published: 27 February 2012
PDF: 6 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620C (27 February 2012); doi: 10.1117/12.906810
Show Author Affiliations
K. Lorenz, Instituto Tecnológico e Nuclear (Portugal)
Univ. de Lisboa (Portugal)
S. M. C. Miranda, Instituto Tecnológico e Nuclear (Portugal)
E. Alves, Instituto Tecnológico e Nuclear (Portugal)
Univ. de Lisboa (Portugal)
I. S. Roqan, Univ. of Strathclyde (United Kingdom)
K. P. O'Donnell, Univ. of Strathclyde (United Kingdom)
M. Boćkowski, Institute of High Pressure Physics (Poland)

Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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