Doped ZnO is one of the materials currently being considered in commercial optoelectronic applications as a potential indium tin oxide (ITO) replacement for the transparent conducting oxide (TCO). The properties of doped ZnO anodes prepared at Arkema Inc. are analyzed using spectroscopic ellipsometer (230 to 1700 nm) and Hall-effect. The modeling of the refractive indexes is conducted using a double oscillator model. The model parameters are tested on a double layer: undoped and doped structure deposited by atmospheric pressure chemical vapor deposition (APCVD) on glass substrates. Excellent correlation between calculated and experimental parameters was obtained.

Date Published: 29 February 2012
PDF: 7 pages
Proc. SPIE 8263, Oxide-based Materials and Devices III, 826308 (29 February 2012); doi: 10.1117/12.906723

Published in SPIE Proceedings Vol. 8263:
Oxide-based Materials and Devices III
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)