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Proceedings Paper

Photovoltaic properties of silicon nanocrystals in silicon carbide
Author(s): P. Löper; A. Witzky; A. Hartel; S. Gutsch; D. Hiller; J. C. Goldschmidt; S. Janz; S. W. Glunz; M. Zacharias
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Paper Abstract

Silicon nanocrystal quantum dots in a dielectric matrix form a material with higher band gap than silicon, but still compatible with silicon technology. So far, devices using silicon nanocrystals have been realized either on silicon wafers, or using in-situ doping in the superlattice deposition which may hinder the nanocrystal formation. In this paper, a vertical PIN device is presented which allows to investigated the electrical and photovoltaic properties of nanocrystal quantum dot layers. The device structure circumvents any influence of a substrate wafer or dopants and provides full flexibility in the material choice of both, i.e. electron and hole, contacts. Furthermore, not-high-temperature stable contact materials can be applied. Devices have been realized using SiC/Si nanocrystal multilayers as the i-region and doped a-SixC1-x:H layers as electron and hole contacts. First devices show open-circuit voltage of up to 400mV.

Paper Details

Date Published: 21 February 2012
PDF: 6 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82560G (21 February 2012); doi: 10.1117/12.906669
Show Author Affiliations
P. Löper, Fraunhofer-Institut für Solare Energiesysteme (Germany)
A. Witzky, Fraunhofer-Institut für Solare Energiesysteme (Germany)
A. Hartel, Albert-Ludwigs-Univ. Freiburg (Germany)
S. Gutsch, Albert-Ludwigs-Univ. Freiburg (Germany)
D. Hiller, Albert-Ludwigs-Univ. Freiburg (Germany)
J. C. Goldschmidt, Fraunhofer-Institut für Solare Energiesysteme (Germany)
S. Janz, Fraunhofer-Institut für Solare Energiesysteme (Germany)
S. W. Glunz, Fraunhofer-Institut für Solare Energiesysteme (Germany)
M. Zacharias, Albert-Ludwigs-Univ. Freiburg (Germany)

Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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