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Proceedings Paper

Investigation of parallel coupling mechanisms in silicon integrated chip sensors
Author(s): Oleg Zero; Astrid Aksnes
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Paper Abstract

The opto-mechanical properties of silicon together with its fabrication flexibility make it an excellent candidate for many integrated photonic applications. The recent trend in miniaturizing optical components, while maintaining stringent demands for their performance opens a way for various coupling mechanisms to be used for sensing and switching. However, as the system grows in complexity, the number of possible coupling channels increases. Being able to resolve the specific coupling mechanisms becomes a delicate and challenging task. At the same time, the overall performance of the device is often decided by the collective performance of all of these channels rather than by each of them separately. Because of that, it becomes essential to account for all of these mechanisms, while modelling the system. As an example of such a system, a mechanical displacement sensor is presented, whose principle is based on simultaneous evanescent coupling mechnisms between the TE- and TM-like modes. By using the FEM approach, the coupling mechanisms between the waveguides (and modes) are analyzed separately through 2-dimensional simulation and later combined and investigated globally in a series of 3-dimensional simulations.

Paper Details

Date Published: 2 February 2012
PDF: 6 pages
Proc. SPIE 8266, Silicon Photonics VII, 826604 (2 February 2012); doi: 10.1117/12.906650
Show Author Affiliations
Oleg Zero, Norwegian Univ. of Science and Technology (Norway)
Astrid Aksnes, Norwegian Univ. of Science and Technology (Norway)

Published in SPIE Proceedings Vol. 8266:
Silicon Photonics VII
Joel Kubby; Graham Trevor Reed, Editor(s)

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