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Proceedings Paper

Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers
Author(s): T. Leinonen; V.-M. Korpijärvi; A. Härkönen; M. Guina
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Paper Abstract

We review recent results concerning the development of dilute nitride based semiconductor disk lasers. We have demonstrated over 7.4 W of output power at the second harmonic wavelength (around 590 nm) using a β-BBO crystal. Over 10 W has been demonstrated at ~1.2 μm, and multi-watt output power has been achieved at 589 nm with narrow linewidth (δν < 20 MHz).

Paper Details

Date Published: 14 February 2012
PDF: 7 pages
Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824208 (14 February 2012); doi: 10.1117/12.906204
Show Author Affiliations
T. Leinonen, Tampere Univ. of Technology (Finland)
V.-M. Korpijärvi, Tampere Univ. of Technology (Finland)
A. Härkönen, Tampere Univ. of Technology (Finland)
M. Guina, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 8242:
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Anne C. Tropper, Editor(s)

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