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Proceedings Paper

Auger effect in nonpolar quantum wells
Author(s): Lukas Schade; Ulrich T. Schwarz; Tim Wernicke; Jens Rass; Simon Ploch; Markus Weyers; Michael Kneissl
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Paper Abstract

Optical polarization properties of nonpolar quantum wells and their efficiency droop at high charge carrier densities are discussed. Therefore, a photoluminescence experiment connecting both characteristics is presented. The additional property of polarization resolution provides information about the two lowest interband transitions and the occupation of holes in the two highest valence subbands. The ratio of occupation in the two subbands is a direct projection of the Fermi-Dirac statistics. Because of the carrier dependency of the Auger losses, the quantum well internal efficiency drops in the high charge carrier regime. Here, we observe that the peak of the internal quantum efficiency of the individual subband occurs at different excitation densities as a direct consequence of the Fermi-Dirac statistics.

Paper Details

Date Published: 27 February 2012
PDF: 9 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620K (27 February 2012); doi: 10.1117/12.905955
Show Author Affiliations
Lukas Schade, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Univ. Freiburg (Germany)
Ulrich T. Schwarz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Univ. Freiburg (Germany)
Tim Wernicke, Technische Univ. Berlin (Germany)
Jens Rass, Technische Univ. Berlin (Germany)
Simon Ploch, Technische Univ. Berlin (Germany)
Markus Weyers, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
Michael Kneissl, Technische Univ. Berlin (Germany)
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)

Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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