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Proceedings Paper

Room-temperature type-I GaSb-based lasers in the 3.0 - 3.7 μm wavelength range
Author(s): Kristijonas Vizbaras; Augustinas Vizbaras; Alexander Andrejew; Christian Grasse; Stephan Sprengel; Markus-Christian Amann
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Paper Abstract

GaSb-based type-I quantum-well lasers, emitting in the spectral range from 2 to 4 μm are promising light sources for various trace gas sensing systems by means of tunable diode laser absorption spectroscopy (TDLAS). Excellent device performance has been achieved so far in the spectral range from 2 to 3 μm, however, room-temperature operation above 3 μm is much more difficult to achieve. In this work we demonstrate the extension of room-temperature operation wavelength of GaSb-based type-I lasers up to 3.73 μm by implementation of high-quality quinternary AlGaInAsSb heterostructures.

Paper Details

Date Published: 8 February 2012
PDF: 7 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771B (8 February 2012); doi: 10.1117/12.905930
Show Author Affiliations
Kristijonas Vizbaras, Technische Univ. München (Germany)
Augustinas Vizbaras, Technische Univ. München (Germany)
Alexander Andrejew, Technische Univ. München (Germany)
Christian Grasse, Technische Univ. München (Germany)
Stephan Sprengel, Technische Univ. München (Germany)
Markus-Christian Amann, Technische Univ. München (Germany)

Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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