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Proceedings Paper

Multichannel analog-to-digital converters based on current mirrors for the optical systems
Author(s): Vladimir G. Krasilenko; A. I. Nikolskyy; M. A. Nikolska; R. F. Lobodzinska
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Paper Abstract

The paper considers results of designing and modeling analogue-digital converters (ADC) based on current mirrors for the optical systems and neural networks with parallel inputs-outputs. Such ADC, named us multichannel analog-todigital converters based on current mirrors (M ADC CM). Compared with usual converters, for example, reading, a bitby- bit equilibration, and so forth, have a number of advantages: high speed and reliability, simplicity, small power consumption, the big degree of integration in linear and matrix structures. The considered aspects of designing of M_ADC CM in binary codes. Base digit cells (ABC) of such M_ADC CM, series-pipelined are connected in structures, consist from 20-30 CMOS the transistors, one photodiode, have low (1,5-3,5) supply voltage, work in current modes with the maximum values of currents (10-40)μA. Therefore such new principles of realization high-speed low-discharge M_ADC CM have allowed, as have shown modeling experiments, to reach time of transformation less than 20-30 nS at 5-6 bits of a binary code and the general power 1-5 mW. The quantity easily cascadable ABC depends on wordlength ADC, and makes n, and provides quantity of levels of quantization equal N=2n. Such simple enough on structure M ADC CM, having low power consumption ≤ 3 ÷ 5mW, supply voltage (3-7)V, is provided at the same time with good dynamic characteristics (frequency of digitization even for 1,5μm or 0,35 μm- CMOS-technologies has made 40 MHz, and can be increased 10 times) and accuracy (Δquantization 156,25nA for I max10μA) characteristics is show. The range can be transformed optical signals, taking into account sensitivity of modern photodetectors makes 20-200 μW in such ADC. M_ADC CM open new prospects for realization linear and matrix (with picture operands) micro photoelectronic structures which are necessary for neural networks, digital optoelectronic processors, neurofuzzy controllers, and so forth.

Paper Details

Date Published: 7 December 2011
PDF: 12 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 830827 (7 December 2011); doi: 10.1117/12.905794
Show Author Affiliations
Vladimir G. Krasilenko, Open International Univ. of Human Development (Ukraine)
A. I. Nikolskyy, Vinnitsa National Technical Univ. (Ukraine)
M. A. Nikolska, Vinnitsa National Technical Univ. (Ukraine)
R. F. Lobodzinska, Open International Univ. of Human Development (Ukraine)

Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI
Guang-Hua Duan, Editor(s)

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