
Proceedings Paper
IV-VI mid-infrared VECSEL on Si-substrateFormat | Member Price | Non-Member Price |
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Paper Abstract
Optically pumped VECSEL (vertical external cavity surface emitting lasers) based on IV-VI semiconductors grown on Si
cover the entire wavelength range between 3.0 and 10 μm. Thanks to their simple structure and large wavelength
coverage they are an interesting alternative laser technology to access the mid-infrared wavelength region. The active
layers consist either of homogeneous "bulk" layers, double heterostructures or quantum well structures of the PbSe, PbTe
or PbS material system. Maximum operation temperatures of 325 K are achieved with output powers above 200 mWp.
Further, continuously tunable VECSEL are presented, emitting between 3.2 and 5.4 μm. The single emission mode is
continuously tunable over 50-100 nm around the center wavelength, yielding an output power > 10 mWp. The axial
symmetric emission beam has a half divergence angle of < 3.3°.
Paper Details
Date Published: 14 February 2012
PDF: 11 pages
Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420H (14 February 2012); doi: 10.1117/12.905643
Published in SPIE Proceedings Vol. 8242:
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Anne C. Tropper, Editor(s)
PDF: 11 pages
Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420H (14 February 2012); doi: 10.1117/12.905643
Show Author Affiliations
Published in SPIE Proceedings Vol. 8242:
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Anne C. Tropper, Editor(s)
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