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Proceedings Paper

IV-VI mid-infrared VECSEL on Si-substrate
Author(s): M. Fill; F. Felder; M. Rahim; A. Khiar; R. Rodriguez; H. Zogg; A. Ishida
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Paper Abstract

Optically pumped VECSEL (vertical external cavity surface emitting lasers) based on IV-VI semiconductors grown on Si cover the entire wavelength range between 3.0 and 10 μm. Thanks to their simple structure and large wavelength coverage they are an interesting alternative laser technology to access the mid-infrared wavelength region. The active layers consist either of homogeneous "bulk" layers, double heterostructures or quantum well structures of the PbSe, PbTe or PbS material system. Maximum operation temperatures of 325 K are achieved with output powers above 200 mWp. Further, continuously tunable VECSEL are presented, emitting between 3.2 and 5.4 μm. The single emission mode is continuously tunable over 50-100 nm around the center wavelength, yielding an output power > 10 mWp. The axial symmetric emission beam has a half divergence angle of < 3.3°.

Paper Details

Date Published: 14 February 2012
PDF: 11 pages
Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420H (14 February 2012); doi: 10.1117/12.905643
Show Author Affiliations
M. Fill, ETH Zurich (Switzerland)
Phocone AG (Switzerland)
F. Felder, ETH Zurich (Switzerland)
Phocone AG (Switzerland)
M. Rahim, ETH Zurich (Switzerland)
A. Khiar, ETH Zurich (Switzerland)
R. Rodriguez, ETH Zurich (Switzerland)
H. Zogg, ETH Zurich (Switzerland)
A. Ishida, Shizuoka Univ. (Japan)

Published in SPIE Proceedings Vol. 8242:
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Anne C. Tropper, Editor(s)

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