Proceedings Paper
High-power quantum dot semiconductor disk lasers| Format | Member Price | Non-Member Price |
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Paper Abstract
The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040
nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The
number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of
the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be
practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management
approaches are studied and compared.
Paper Details
Date Published: 14 February 2012
PDF: 10 pages
Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824207 (14 February 2012); doi: 10.1117/12.905067
Published in SPIE Proceedings Vol. 8242:
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Anne C. Tropper, Editor(s)
PDF: 10 pages
Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824207 (14 February 2012); doi: 10.1117/12.905067
Show Author Affiliations
Jussi Rautiainen, Tampere Univ. of Technology (Finland)
Mantas Butkus, Univ. of Dundee (United Kingdom)
Igor Krestnikov, Innolume GmbH (Germany)
Mantas Butkus, Univ. of Dundee (United Kingdom)
Igor Krestnikov, Innolume GmbH (Germany)
Edik U. Rafailov, Univ. of Dundee (United Kingdom)
Oleg Okhotnikov, Tampere Univ. of Technology (Finland)
Oleg Okhotnikov, Tampere Univ. of Technology (Finland)
Published in SPIE Proceedings Vol. 8242:
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Anne C. Tropper, Editor(s)
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