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Proceedings Paper

Optimizing the power confinement in silicon slot waveguides by use of finite element method
Author(s): D. M. H. Leung; X. B. Kan; B. M. A. Rahman; N. Kejalakshmy; K. T. V. Grattan
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Paper Abstract

In this paper, the power confinement and the power density in the slot region of a vertical and horizontal slot waveguide are optimized; full-vectorial H and E-field profiles along with Poynting vector are also shown for both of these silicon waveguides. Bending loss of such slot waveguides is also presented.

Paper Details

Date Published: 6 December 2011
PDF: 6 pages
Proc. SPIE 8307, Passive Components and Fiber-Based Devices VIII, 83071A (6 December 2011); doi: 10.1117/12.904947
Show Author Affiliations
D. M. H. Leung, City Univ. London (United Kingdom)
X. B. Kan, City Univ. London (United Kingdom)
B. M. A. Rahman, City Univ. London (United Kingdom)
N. Kejalakshmy, City Univ. London (United Kingdom)
K. T. V. Grattan, City Univ. London (United Kingdom)

Published in SPIE Proceedings Vol. 8307:
Passive Components and Fiber-Based Devices VIII
Bishnu P. Pal, Editor(s)

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