Proceedings Paper
Novel silicon-on-insulator grating couplers based on CMOS poly-silicon gate layer| Format | Member Price | Non-Member Price |
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Paper Abstract
Grating couplers are widely investigated as a coupling interface between silicon-on-insulator waveguides and optical
fibers. In this work, novel grating couplers based on strip poly-Si are proposed. This structure utilizes the poly-Si gate
layer of the CMOS MOSFETs, and thus enables grating couplers integrated with CMOS circuits without adding any
additional masks and process steps. Simulation results show that a coupling efficiency over 60% can be achieved
between silicon-on-insulator waveguides and fibers.
Paper Details
Date Published: 28 November 2011
PDF: 6 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081G (28 November 2011); doi: 10.1117/12.904183
Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI
Guang-Hua Duan, Editor(s)
PDF: 6 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081G (28 November 2011); doi: 10.1117/12.904183
Show Author Affiliations
Chao Qiu, Shanghai Institute of Microsystem and Information Technology (China)
Grace Semiconductor Manufacturing Corp. (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Zhen Sheng, Shanghai Institute of Microsystem and Information Technology (China)
Le Li, Grace Semiconductor Manufacturing Corp. (China)
Albert Pang, Grace Semiconductor Manufacturing Corp. (China)
Aimin Wu, Shanghai Institute of Microsystem and Information Technology (China)
Grace Semiconductor Manufacturing Corp. (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Zhen Sheng, Shanghai Institute of Microsystem and Information Technology (China)
Le Li, Grace Semiconductor Manufacturing Corp. (China)
Albert Pang, Grace Semiconductor Manufacturing Corp. (China)
Aimin Wu, Shanghai Institute of Microsystem and Information Technology (China)
Junjie Du, Shanghai Institute of Microsystem and Information Technology (China)
Jing Chen, Shanghai Institute of Microsystem and Information Technology (China)
Xi Wang, Shanghai Institute of Microsystem and Information Technology (China)
Fuwan Gan, Shanghai Institute of Microsystem and Information Technology (China)
Shichang Zou, Shanghai Institute of Microsystem and Information Technology (China)
Grace Semiconductor Manufacturing Corp. (China)
Jing Chen, Shanghai Institute of Microsystem and Information Technology (China)
Xi Wang, Shanghai Institute of Microsystem and Information Technology (China)
Fuwan Gan, Shanghai Institute of Microsystem and Information Technology (China)
Shichang Zou, Shanghai Institute of Microsystem and Information Technology (China)
Grace Semiconductor Manufacturing Corp. (China)
Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI
Guang-Hua Duan, Editor(s)
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