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Proceedings Paper

Degradation mechanism of InAlN/GaN based HFETs under high electric field stress
Author(s): Congyong Zhu; Mo Wu; Cemil Kayis; Fan Zhang; Xing Li; Romualdo Ferreyra; Vitaliy Avrutin; Ümit Özgur; Hadis Morkoç
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Paper Abstract

Degradation of InAlN/GaN based HFETs under stress for four bias conditions, namely, on-state high field stress (hot phonon, hot electron and self heating effect), off-state high field stress (hot electron effect), onstate low field stress (self heating effect), and reverse gate bias stress (inverse piezoelectric effect) has been examined. The degradation is characterized by monitoring electrical properties, such as, drain current reduction, gate lag, and low frequency noise. On-state high field stress has shown more than 50% reduction in the drain current and approximately 25-30 dBc/Hz increase in low frequency noise after 25 hours of stress, while other stress conditions led to much lesser degradation. It is demonstrated that the major degradation mechanism in InAlN/GaN HFETs is the hot-phonon and hot-electron effect in the realm of short term effects.

Paper Details

Date Published: 27 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826225 (27 February 2012); doi: 10.1117/12.903983
Show Author Affiliations
Congyong Zhu, Virginia Commonwealth Univ. (United States)
Mo Wu, Virginia Commonwealth Univ. (United States)
Cemil Kayis, Virginia Commonwealth Univ. (United States)
Fan Zhang, Virginia Commonwealth Univ. (United States)
Xing Li, Virginia Commonwealth Univ. (United States)
Romualdo Ferreyra, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
Ümit Özgur, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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