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Proceedings Paper

High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput
Author(s): Koh Matsumoto; Akinori Ubukata; Kazutada Ikenaga; Kazuki Naito; Jun Yamamoto; Yoshiki Yano; Toshiya Tabuchi; Akira Yamaguchi; Yuzaburo Ban; Kosuke Uchiyama
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Paper Abstract

Throughput requirement of the epitaxial process of GaN on Si is described. The impact of the growth rate of AlGaN for the buffer layer of GaN on Si is highlighted. In the attempt of growing GaN on Si, we have tested a production scale high flow speed MOVPE reactor (TAIYO NIPPON SANSO UR25k) for 6 inch X 7 wafers. Al0.58Ga0.42N was grown with the growth rate of 1.85μm/hr at 30 kPa. AlN was grown with the growth rate of 1.4μm/hr at 13kPa. AlN/GaN SLS (5nm/20nm) was also grown at the growth rate of 1.4μm/hr. An excellent uniformity of aluminum concentration of less than 0.5% was also obtained for Al0.58Ga0.42N. The challenge which we are facing to further increase of the throughput is summarized.

Paper Details

Date Published: 22 February 2012
PDF: 7 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826202 (22 February 2012); doi: 10.1117/12.903642
Show Author Affiliations
Koh Matsumoto, TN EMC Ltd. (Japan)
Akinori Ubukata, Taiyo Nippon Sanso Corp. (Japan)
Kazutada Ikenaga, Taiyo Nippon Sanso Corp. (Japan)
Kazuki Naito, Taiyo Nippon Sanso Corp. (Japan)
Jun Yamamoto, TN EMC Ltd. (Japan)
Yoshiki Yano, Taiyo Nippon Sanso Corp. (Japan)
Toshiya Tabuchi, Taiyo Nippon Sanso Corp. (Japan)
Akira Yamaguchi, Taiyo Nippon Sanso Corp. (Japan)
Yuzaburo Ban, TN EMC Ltd. (Japan)
Kosuke Uchiyama, TN EMC Ltd. (Japan)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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