Share Email Print

Proceedings Paper

Experimental study on the responsivity enhancement of Mn1.56Co0.96Ni0.48O4 detector under moderate bias field
Author(s): Wei Zhou; Yun Hou; Yan Qing Gao; Leibo Zhang; Zhi Ming Huang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

As a typical thermal sensitive material, Mn1.56Co0.96Ni0.48O4 (MCN) has achieved widely applications in uncooled bolometer. In this paper, we report that a large increase in electrical conductivity of MCN is obtained with moderate electric-field strengths (E~103V/cm) applied at room temperature (about 300K). Great enhancement in the responsivity is observed when operating with a proper electric bias field, which corresponds to a threshold voltage VTh. MCN bulk materials are prepared by using the sintering method. Micro MCN detector is fabricated by scribing the bulk material into pieces sized 200×100×10μm. The detector is clinged to an Al2O3 substrate with some electrical insulated epoxy glue which is mounted onto a Cu sink. The surrounding temperature is controlled precisely by a temperature controller with a precision of 1mK. Voltage-current characteristics at 270-330K are carefully examined. Different sweeping speeds of the bias-voltage are applied in different orders so as to find out a proper scanning rate, in which the electrical measurement is proceeded in a state of quasi-thermal equilibrium. According to quasi-thermal equilibrium and the time dependent nominal D.C. power, the temperature increase during the measurement is estimated. The conduction mechanism can be well explained with small polaron theory. Empirical equations are used to describe the thermal dynamic process in the pulsed mode, and the process is also simply simulated via numerical calculations. The experimental results and simulation works will be of some referential value to future studies in uncooled microbolometer made in transition metal oxides.

Paper Details

Date Published: 8 September 2011
PDF: 7 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81934G (8 September 2011); doi: 10.1117/12.901239
Show Author Affiliations
Wei Zhou, Shanghai Institute of Technical Physics (China)
Yun Hou, Shanghai Institute of Technical Physics (China)
Yan Qing Gao, Shanghai Institute of Technical Physics (China)
Leibo Zhang, Shanghai Institute of Technical Physics (China)
Zhi Ming Huang, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?