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Development of CdZnTe radiation detectors
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Paper Abstract

Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

Paper Details

Date Published: 8 September 2011
PDF: 8 pages
Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 819129 (8 September 2011); doi: 10.1117/12.901077
Show Author Affiliations
Aleksey Bolotnikov, Brookhaven National Lab. (United States)
Giuseppe Camarda, Brookhaven National Lab. (United States)
Anwar Hossain, Brookhaven National Lab. (United States)
Ki Hyun Kim, Brookhaven National Lab. (United States)
Ge Yang, Brookhaven National Lab. (United States)
Rubi Gul, Brookhaven National Lab. (United States)
Yonggang Cui, Brookhaven National Lab. (United States)
Ralph B. James, Brookhaven National Lab. (United States)

Published in SPIE Proceedings Vol. 8191:
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies
Yuelin Wang; Huikai Xie; Yufeng Jin, Editor(s)

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