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Proceedings Paper

High quality mid-infrared InAs film grown on (100) GaSb substrate by LPE using a ternary melt
Author(s): Changhong Sun; Shuhong Hu; Qiwei Wang; Jie Wu; Ning Dai
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Paper Abstract

InAs film has been successfully grown on (100) GaSb substrate using a ternary In-As-Sb melt by liquid phase epitaxy (LPE). The high resolution X-ray diffraction (HRXRD) and Rocking curve showed the film was single crystalline InAs with high quality. The Fourier transform infrared (FTIR) transmission spectrum revealed that the cutoff wavelength was about 3.8 μm at room temperature. The electron mobility at 300 K is higher than 2×10 4cm2/Vs. It indicates that the structure of InAs/GaSb prepared by LPE has a potential for mid-infrared devices.

Paper Details

Date Published: 8 September 2011
PDF: 8 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932L (8 September 2011); doi: 10.1117/12.900489
Show Author Affiliations
Changhong Sun, Shanghai Institute of Technical Physics (China)
Shuhong Hu, Shanghai Institute of Technical Physics (China)
Qiwei Wang, Shanghai Institute of Technical Physics (China)
Jie Wu, Shanghai Institute of Technical Physics (China)
Ning Dai, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)

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