We have measured room temperature x-ray absorption spectroscopy (XAS) at the Mn L_2,3edges on ferromagnetic Ga_1-xMn_xAs films prepared under different As₂/Ga flux ratios. A growth condition relative energy shift (ΔE) at L₂ peak was observed, the results suggest that the formation of antiferromagnetic Mn-As complex under As-rich growth conditions and the energy shift can be weakened even eliminated by post-growth low temperature (LT) annealing. The intensity of XAS spectrum was promoted after post-growth annealing, and the effect of annealing was also influenced by growth conditions.

Date Published: 8 September 2011
PDF: 10 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81931F (8 September 2011); doi: 10.1117/12.899858

Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)